Infineon CoolMOS N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-220 IPAN50R500CEXKSA1
- RS-stocknr.:
- 217-2493
- Fabrikantnummer:
- IPAN50R500CEXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 21,55
(excl. BTW)
€ 26,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 300 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,431 | € 21,55 |
| 100 - 200 | € 0,352 | € 17,60 |
| 250 - 450 | € 0,348 | € 17,40 |
| 500 - 1200 | € 0,343 | € 17,15 |
| 1250 + | € 0,339 | € 16,95 |
*prijsindicatie
- RS-stocknr.:
- 217-2493
- Fabrikantnummer:
- IPAN50R500CEXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 28W | |
| Forward Voltage Vf | 850mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.1mm | |
| Height | 29.85mm | |
| Width | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 28W | ||
Forward Voltage Vf 850mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 16.1mm | ||
Height 29.85mm | ||
Width 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
Gerelateerde Links
- Infineon CoolMOS N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-220 IPAN50R500CEXKSA1
- Infineon 500V CoolMOS CE N-Channel MOSFET, 7.6 A, 550 V N, 3-Pin TO-220 IPA50R800CEXKSA2
- Infineon 500V CoolMOS CE N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-252 IPD50R500CEAUMA1
- Infineon 500V CoolMOS CE N-Channel MOSFET, 6.6 A, 500 V N, 3-Pin TO-220 IPA50R950CEXKSA2
- Infineon CoolMOS CE N-Channel MOSFET, 5.4 A, 500 V Enhancement, 3-Pin TO-220 IPA50R500CEXKSA2
- Infineon CoolMOS CE N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220 IPA60R080P7XKSA1
- Infineon CoolMOS N-Channel MOSFET, 8.4 A, 600 V N, 3-Pin TO-220
- Infineon CoolMOS N-Channel MOSFET, 5.2 A, 650 V N, 3-Pin TO-220
