Infineon P7 Type N-Channel MOSFET, 9 A, 950 V P, 3-Pin TO-220
- RS-stocknr.:
- 217-2491
- Fabrikantnummer:
- IPA95R750P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 53,95
(excl. BTW)
€ 65,30
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Op voorraad
- 400 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,079 | € 53,95 |
| 100 - 200 | € 0,874 | € 43,70 |
| 250 - 450 | € 0,809 | € 40,45 |
| 500 - 950 | € 0,766 | € 38,30 |
| 1000 + | € 0,701 | € 35,05 |
*prijsindicatie
- RS-stocknr.:
- 217-2491
- Fabrikantnummer:
- IPA95R750P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Series | P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 29.75mm | |
| Length | 10.65mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Series P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 29.75mm | ||
Length 10.65mm | ||
Automotive Standard No | ||
The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Best-in-class FOMRDS (on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Best-in-class CoolMOS™ quality and reliability
Fully optimized portfolio
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