Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 41 A, 40 V Enhancement, 8-Pin PDFN56 TSM150NB04LCR
- RS-stocknr.:
- 216-9696
- Fabrikantnummer:
- TSM150NB04LCR
- Fabrikant:
- Taiwan Semiconductor
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 24,70
(excl. BTW)
€ 29,875
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 1.650 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,988 | € 24,70 |
| 50 - 75 | € 0,969 | € 24,23 |
| 100 - 225 | € 0,89 | € 22,25 |
| 250 - 975 | € 0,872 | € 21,80 |
| 1000 + | € 0,807 | € 20,18 |
*prijsindicatie
- RS-stocknr.:
- 216-9696
- Fabrikantnummer:
- TSM150NB04LCR
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 56W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Standards/Approvals | RoHS, IEC, WEEE | |
| Height | 1.1mm | |
| Length | 6.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 56W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Standards/Approvals RoHS, IEC, WEEE | ||
Height 1.1mm | ||
Length 6.2mm | ||
Automotive Standard No | ||
not founs
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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