Taiwan Semiconductor TSM025 N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PDFN56
- RS-stocknr.:
- 216-9682
- Fabrikantnummer:
- TSM110NB04DCR
- Fabrikant:
- Taiwan Semiconductor
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 216-9682
- Fabrikantnummer:
- TSM110NB04DCR
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.2mm | |
| Standards/Approvals | No | |
| Length | 6.2mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 5.2mm | ||
Standards/Approvals No | ||
Length 6.2mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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