Infineon Dual HEXFET 1 N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8 IRF8910TRPBF
- RS-stocknr.:
- 215-2590
- Fabrikantnummer:
- IRF8910TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (25 eenheden, in een pakket van 25)*
€ 17,08
(excl. BTW)
€ 20,65
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,683 | € 17,08 |
| 125 - 225 | € 0,649 | € 16,23 |
| 250 - 600 | € 0,622 | € 15,55 |
| 625 - 1225 | € 0,594 | € 14,85 |
| 1250 + | € 0,554 | € 13,85 |
*prijsindicatie
- RS-stocknr.:
- 215-2590
- Fabrikantnummer:
- IRF8910TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 7.4nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 7.4nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.
Lead-Free
Low RDS(on)
Ultra-Low Gate Impedance
Dual N-Channel MOSFET
Gerelateerde Links
- Infineon Dual HEXFET 1 N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF
- Infineon Dual HEXFET 1 N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8