Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

RS-stocknr.:: 215-2539
Fabrikantnummer:: IPP60R099P7XKSA1
Fabrikant:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

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RS-stocknr.:: 215-2539
Fabrikantnummer:: IPP60R099P7XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	117W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.36mm
	Height	4.57mm
	Width	15.95mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 117W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.36mm
	Height 4.57mm
	Width 15.95mm
	Automotive Standard No

Infineon CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 31A Maximum Continuous Drain Current - IPP60R099P7XKSA1

This MOSFET is a high-voltage N-channel transistor designed for power-switching roles in through-hole assemblies. It operates over a wide temperature range and is intended for applications requiring substantial voltage handling and continuous current capability while mounted in a TO-220 package.

Features and Benefits:

• 600V drain-source rating enabling high-voltage switching
• 31A continuous drain current for sustained power delivery
• 99 mΩ low RDS(on) reducing conduction losses
• 117W power dissipation for heavy-load thermal handling
• 45 nC typical gate charge Qg enabling reasonable switching speed
• 20V gate-source limit supporting common drive voltages

Applications

• Suitable for mains-side power conversion stages
• Ideal for switched-mode power supplies requiring 600V capability
• Used with heatsinked through-hole mounts in industrial units
• Can be used for high-voltage motor drive front-ends
• Suitable for power transistor roles in telecoms rectifiers

What thermal extremes can it tolerate during operation?

It is rated to function from -55 °C up to 150 °C, allowing use in environments with wide temperature variation.

How many electrical connections does the package provide?

The device is supplied with three pins configured for the typical MOSFET gate, drain and source connections in a through-hole layout.

What mounting method does it require for circuit assembly?

The component is supplied in a TO-220 format intended for through-hole mounting and attachment to an external heatsink as needed.

What gate-drive considerations should be observed?

The maximum permissible gate-source voltage is 20V, so gate drivers should limit amplitude within that threshold to prevent device stress.