Infineon CoolMOS C7 Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 214-9118
- Fabrikantnummer:
- IPW65R125C7XKSA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 30 eenheden)*
€ 68,82
(excl. BTW)
€ 83,28
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 240 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 2,294 | € 68,82 |
*prijsindicatie
- RS-stocknr.:
- 214-9118
- Fabrikantnummer:
- IPW65R125C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 101W | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 101W | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Gerelateerde Links
- Infineon CoolMOS C7 Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247 IPW65R125C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET, 46 A, 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247