Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262
- RS-stocknr.:
- 214-9067
- Fabrikantnummer:
- IPI80N06S4L07AKSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 34,70
(excl. BTW)
€ 42,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 250 stuk(s) vanaf 06 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,694 | € 34,70 |
| 100 - 200 | € 0,676 | € 33,80 |
| 250 - 450 | € 0,658 | € 32,90 |
| 500 - 950 | € 0,641 | € 32,05 |
| 1000 + | € 0,625 | € 31,25 |
*prijsindicatie
- RS-stocknr.:
- 214-9067
- Fabrikantnummer:
- IPI80N06S4L07AKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 23.45mm | |
| Width | 4.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 23.45mm | ||
Width 4.4 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
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