Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1

RS-stocknr.:: 214-9055
Fabrikantnummer:: IPD90N04S403ATMA1
Fabrikant:: Infineon

Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 15 eenheden)*

€ 16,97

(excl. BTW)

€ 20,54

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

17.085 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
15 - 60	€ 1,131	€ 16,97
75 - 135	€ 1,075	€ 16,13
150 - 360	€ 1,029	€ 15,44
375 - 735	€ 0,984	€ 14,76
750 +	€ 0,939	€ 14,09

*prijsindicatie

RS-stocknr.:: 214-9055
Fabrikantnummer:: IPD90N04S403ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS-T2
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Power Dissipation Pd	94W
	Maximum Operating Temperature	175°C
	Length	6.5mm
	Height	2.3mm
	Standards/Approvals	No
	Width	6.22mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS-T2
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Power Dissipation Pd 94W
	Maximum Operating Temperature 175°C
	Length 6.5mm
	Height 2.3mm
	Standards/Approvals No
	Width 6.22mm
	Automotive Standard AEC-Q101

Datasheet - IPD90N04S403ATMA1

Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90N04S403ATMA1

This MOSFET is a surface-mount N-channel enhancement device designed for power switching and conversion in demanding environments. It operates across a wide temperature range and supports high continuous drain currents, making it suitable for thermal and electrical stress conditions in automotive and industrial contexts.

Features and Benefits:

• 40V maximum drain-source voltage enables robust low-voltage power stages
• 90A continuous drain current supports high-current delivery
• 3.2mΩ maximum Rds(on) minimises conduction losses under load
• 94W maximum power dissipation allows substantial heat handling
• 51nC typical gate charge permits predictable switching behaviour
• 20V maximum gate-source voltage preserves gate insulation margin

Applications

• Suitable for DC-DC converter power stages in vehicles
• Ideal for high-current load switching in automotive systems
• Used with surface-mount assemblies requiring Compact power devices
• Can be used for synchronous rectification in converters
• Used for thermal-tolerant power stages exposed to wide temperatures

What ambient range can it tolerate during operation?

It is rated to function from −55°C up to 175°C, providing wide thermal tolerance.

Which package type is used for board mounting?

It is supplied in a TO-252 package for surface-mount applications.

How many electrical connections does the device provide?

It has three pins for standard drain, gate and source connections.

What is the channel polarity and mode of operation?

The device uses an N-type channel and operates in enhancement mode.

What forward voltage can be expected during conduction?

The forward voltage is specified at 1.3V for conduction characterisation.