Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0502NSIATMA1
- RS-stocknr.:
- 214-8975
- Fabrikantnummer:
- BSC0502NSIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 11,97
(excl. BTW)
€ 14,49
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 14.985 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 0,798 | € 11,97 |
| 75 - 135 | € 0,758 | € 11,37 |
| 150 - 360 | € 0,726 | € 10,89 |
| 375 - 735 | € 0,693 | € 10,40 |
| 750 + | € 0,646 | € 9,69 |
*prijsindicatie
- RS-stocknr.:
- 214-8975
- Fabrikantnummer:
- BSC0502NSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS 5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Forward Voltage Vf | 0.65V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS 5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Forward Voltage Vf 0.65V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
Gerelateerde Links
- Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON BSC052N03LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TDSON BSZ065N03LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSIATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1