onsemi NTMTS Type N-Channel MOSFET, 236 A, 100 V Enhancement, 8-Pin TDFN NTMTSC002N10MCTXG
- RS-stocknr.:
- 214-8905
- Fabrikantnummer:
- NTMTSC002N10MCTXG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 21,41
(excl. BTW)
€ 25,905
(incl. BTW)
Voeg 20 eenheden toe voor gratis bezorging
Op voorraad
- 1.070 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 4,282 | € 21,41 |
| 50 - 95 | € 3,692 | € 18,46 |
| 100 + | € 3,198 | € 15,99 |
*prijsindicatie
- RS-stocknr.:
- 214-8905
- Fabrikantnummer:
- NTMTSC002N10MCTXG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDFN | |
| Series | NTMTS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 1.02mm | |
| Width | 8.5 mm | |
| Length | 8.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDFN | ||
Series NTMTS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 1.02mm | ||
Width 8.5 mm | ||
Length 8.4mm | ||
Automotive Standard No | ||
The ON Semiconductor NTMTS series is n-channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion.
Pb−Free
RoHS compliant
Gerelateerde Links
- onsemi NTMTS Type N-Channel MOSFET, 236 A, 100 V Enhancement, 8-Pin TDFN
- onsemi NTMTS Type N-Channel MOSFET, 267 A, 100 V Enhancement, 8-Pin TDFN
- onsemi NTMTS Type N-Channel MOSFET, 267 A, 100 V Enhancement, 8-Pin TDFN NTMTSC1D6N10MCTXG
- onsemi Type N-Channel MOSFET, 174 A, 150 V N, 8-Pin TDFN
- onsemi Type N-Channel MOSFET, 174 A, 150 V N, 8-Pin TDFN NTMTSC4D3N15MC
- onsemi SUPERFET III Type N-Channel MOSFET, 16 A, 650 V N, 8-Pin TDFN
- onsemi SUPERFET III Type N-Channel MOSFET, 30 A, 650 V N, 8-Pin TDFN
- onsemi SUPERFET III Type N-Channel MOSFET, 24 A, 650 V N, 8-Pin TDFN