onsemi FCH029N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 FCH029N65S3-F155
- RS-stocknr.:
- 214-8791
- Fabrikantnummer:
- FCH029N65S3-F155
- Fabrikant:
- onsemi
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€ 19,06
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€ 23,06
(incl. BTW)
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- Plus verzending 69 stuk(s) vanaf 29 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 19,06 |
| 10 + | € 16,43 |
*prijsindicatie
- RS-stocknr.:
- 214-8791
- Fabrikantnummer:
- FCH029N65S3-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | FCH029N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 201nC | |
| Maximum Power Dissipation Pd | 463W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | These Devices are Pb-Free and are RoHS | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series FCH029N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 201nC | ||
Maximum Power Dissipation Pd 463W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals These Devices are Pb-Free and are RoHS | ||
Height 5.1mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET is brand−new high voltage super−junction MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Pb−Free
RoHS compliant
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