Infineon 600V CoolMOS G7 SJ N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin HSOF IPT60R102G7XTMA1
- RS-stocknr.:
- 214-4426
- Fabrikantnummer:
- IPT60R102G7XTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 17,57
(excl. BTW)
€ 21,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 1.510 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 3,514 | € 17,57 |
| 10 - 20 | € 3,162 | € 15,81 |
| 25 - 45 | € 2,952 | € 14,76 |
| 50 - 120 | € 2,776 | € 13,88 |
| 125 + | € 2,566 | € 12,83 |
*prijsindicatie
- RS-stocknr.:
- 214-4426
- Fabrikantnummer:
- IPT60R102G7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | 600V CoolMOS G7 SJ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 102mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 141W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.58mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series 600V CoolMOS G7 SJ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 102mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 141W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 10.58mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS G7 SJ MOSFET brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC)
It enables best-in-class R DS(on) in smallest footprint
It has provided production cost reduction
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