Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1
- RS-stocknr.:
- 214-4379
- Fabrikantnummer:
- IPD50R2K0CEAUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 13,60
(excl. BTW)
€ 16,45
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.000 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,272 | € 13,60 |
| 100 - 200 | € 0,199 | € 9,95 |
| 250 - 450 | € 0,188 | € 9,40 |
| 500 - 1200 | € 0,174 | € 8,70 |
| 1250 + | € 0,161 | € 8,05 |
*prijsindicatie
- RS-stocknr.:
- 214-4379
- Fabrikantnummer:
- IPD50R2K0CEAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | 500V CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.65mm | |
| Standards/Approvals | No | |
| Width | 6.42 mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series 500V CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Operating Temperature 150°C | ||
Length 6.65mm | ||
Standards/Approvals No | ||
Width 6.42 mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
This Infineon 500 V Cool MOS CE MOSFET is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards.
It provides very high commutation ruggedness
Gerelateerde Links
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-252 IPD50R500CEAUMA1
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1
- Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252 IPD50R650CEAUMA1
- Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252