Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 214-4371
Fabrikantnummer:: IPB60R360P7ATMA1
Fabrikant:: Infineon

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263

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€ 614,00

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€ 743,00

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Plus verzending 2.000 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per rol*
1000 - 1000	€ 0,614	€ 614,00
2000 +	€ 0,585	€ 585,00

*prijsindicatie

RS-stocknr.:: 214-4371
Fabrikantnummer:: IPB60R360P7ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	600V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	41W
	Typical Gate Charge Qg @ Vgs	13nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.02mm
	Height	4.5mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series 600V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 41W
	Typical Gate Charge Qg @ Vgs 13nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.02mm
	Height 4.5mm
	Automotive Standard No

Datasheet - IPB60R360P7ATMA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPB60R360P7ATMA1

This MOSFET is a high-voltage N-channel device designed for switching and power-conversion roles in industrial power systems. It is supplied in a TO-263 surface-mount package and is intended for applications that require robust gate control and significant drain current handling within elevated temperature ranges.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching capability
• 9A continuous drain current supports substantial load currents
• 360mΩ Rds(on) reduces conduction losses under load
• 41W maximum power dissipation manages thermal stress during operation
• 13nC typical gate charge allows efficient gate-driving transitions
• 20V maximum gate-source tolerance permits common gate-drive voltages

Applications

• Used for high-voltage power-supply switching stages
• Suitable for industrial AC/DC conversion modules
• Ideal for secondary-side synchronous rectification implementations
• Can be used for high-voltage motor-drive auxiliary circuits
• Used with surface-mount assemblies requiring three-terminal power devices

What temperature extremes can it tolerate during operation?

It operates across a range from -55°C up to 150°C enabling use in harsh thermal environments.

Which package and mounting method does it use for board integration?

It is supplied in a TO-263 package designed for surface mounting to facilitate thermal contact and automated assembly.

How does the device handle gate-drive requirements for fast switching?

With a typical gate charge of 13nC and a 20V gate-source limit, it supports brisk switching while using common gate-driver voltages.

What polarity and control mode does the transistor employ?

It is an N-type enhancement-mode device suitable for low-side and high-side switching topologies.