DiodesZetex DMT4008LFDF N-Channel MOSFET, 11.8 A, 40 V Enhancement, 6-Pin UDFN
- RS-stocknr.:
- 213-9207
- Fabrikantnummer:
- DMT4008LFDF-7
- Fabrikant:
- DiodesZetex
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 213-9207
- Fabrikantnummer:
- DMT4008LFDF-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | UDFN | |
| Series | DMT4008LFDF | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.6mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Width | 2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type UDFN | ||
Series DMT4008LFDF | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 0.6mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Width 2mm | ||
Automotive Standard No | ||
The DiodesZetex DMT4008LFDF series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
Low gate threshold voltage
Fast switching speed
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