DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET, 6 A, 100 V Enhancement, 12-Pin VDFN
- RS-stocknr.:
- 213-9146
- Fabrikantnummer:
- DMHT10H032LFJ-13
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 3000 eenheden)*
€ 1.422,00
(excl. BTW)
€ 1.722,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,474 | € 1.422,00 |
*prijsindicatie
- RS-stocknr.:
- 213-9146
- Fabrikantnummer:
- DMHT10H032LFJ-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | VDFN | |
| Series | DMHT10H032LFJ | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 64W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.8mm | |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | |
| Width | 4.5 mm | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type VDFN | ||
Series DMHT10H032LFJ | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 64W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.8mm | ||
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | ||
Width 4.5 mm | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
The DiodesZetex DMHT10H032LFJ series is a N-channel MOSFET in a H-bridge configuration.
High conversion efficiency
Fast switching speed
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