STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247
- RS-stocknr.:
- 212-2092P
- Fabrikantnummer:
- SCT1000N170
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 5 eenheden (geleverd in een buis)*
€ 48,55
(excl. BTW)
€ 58,75
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 5 - 9 | € 9,71 |
| 10 + | € 9,59 |
*prijsindicatie
- RS-stocknr.:
- 212-2092P
- Fabrikantnummer:
- SCT1000N170
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | Hip-247 | |
| Series | SCT1000N170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.15mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type Hip-247 | ||
Series SCT1000N170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 200°C | ||
Height 5.15mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances