Vishay SQJQ142E Type N-Channel MOSFET, 460 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ142E-T1_GE3
- RS-stocknr.:
- 210-5058
- Fabrikantnummer:
- SQJQ142E-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,63
(excl. BTW)
€ 12,86
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.000 stuk(s) vanaf 22 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,126 | € 10,63 |
| 50 - 120 | € 1,914 | € 9,57 |
| 125 - 245 | € 1,592 | € 7,96 |
| 250 - 495 | € 1,276 | € 6,38 |
| 500 + | € 1,064 | € 5,32 |
*prijsindicatie
- RS-stocknr.:
- 210-5058
- Fabrikantnummer:
- SQJQ142E-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 460A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK (8x8L) | |
| Series | SQJQ142E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 8.1 mm | |
| Height | 1.7mm | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 460A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK (8x8L) | ||
Series SQJQ142E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Operating Temperature 175°C | ||
Width 8.1 mm | ||
Height 1.7mm | ||
Length 8mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK 8 x 8L package type.
TrenchFET® Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
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