Vishay SQ2318BES N-Channel MOSFET, 8 A, 40 V Enhancement, 3-Pin SOT-23 SQ2318BES-T1_GE3
- RS-stocknr.:
- 210-5022
- Fabrikantnummer:
- SQ2318BES-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 8,22
(excl. BTW)
€ 9,94
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,411 | € 8,22 |
| 200 - 480 | € 0,403 | € 8,06 |
| 500 - 980 | € 0,308 | € 6,16 |
| 1000 - 1980 | € 0,243 | € 4,86 |
| 2000 + | € 0,186 | € 3,72 |
*prijsindicatie
- RS-stocknr.:
- 210-5022
- Fabrikantnummer:
- SQ2318BES-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Series | SQ2318BES | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Series SQ2318BES | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Height 1.12mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has SOT-23 package type.
AEC-Q101 qualified
100 % Rg and UIS tested
RoHS compliant
Gerelateerde Links
- Vishay TrenchFET N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3
- Vishay TrenchFET N-Channel MOSFET, 8 A, 40 V Enhancement, 3-Pin SOT-23 SQ2318AES-T1_GE3
- Vishay SQ N-Channel MOSFET, 8 A, 30 V Enhancement, 3-Pin SOT-23 SQ2348CES-T1_GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin SOT-23 SQ2364EES-T1_GE3
- Vishay SQ2308FES N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308FES-T1_GE3
- Vishay TrenchFET N-Channel MOSFET, 8 A, 40 V Enhancement, 3-Pin SOT-23
- Vishay SQ2308FES N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET P-Channel MOSFET, -0.84 A, -150 V Enhancement, 3-Pin SOT-23 SQ2325CES-T1_GE3