Fabrikantnummer

STMicroelectronics STO67N60DM6 N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 206-8631P
Fabrikantnummer:: STO67N60DM6
Fabrikant:: STMicroelectronics

STMicroelectronics STO67N60DM6 N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-220

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RS-stocknr.:: 206-8631P
Fabrikantnummer:: STO67N60DM6
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	600V
	Series	STO67N60DM6
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	59mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	150W
	Maximum Gate Source Voltage Vgs	25V
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	72.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	9.8mm
	Height	2.2mm
	Length	11.48mm
	Automotive Standard	No

	Alles selecteren
	Merk STMicroelectronics
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 600V
	Series STO67N60DM6
	Package Type TO-220
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 59mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 150W
	Maximum Gate Source Voltage Vgs 25V
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 72.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 9.8mm
	Height 2.2mm
	Length 11.48mm
	Automotive Standard No

Datasheet - STO67N60DM6

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Excellent switching performance thanks to the extra driving source pin

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