STMicroelectronics STP50N60DM6 Type N-Channel MOSFET, 36 A, 600 V Enhancement, 8-Pin TO-LL
- RS-stocknr.:
- 206-6072
- Fabrikantnummer:
- STP50N60DM6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 167,65
(excl. BTW)
€ 202,85
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 3,353 | € 167,65 |
| 100 - 200 | € 3,311 | € 165,55 |
| 250 - 450 | € 3,271 | € 163,55 |
| 500 - 950 | € 3,231 | € 161,55 |
| 1000 + | € 3,193 | € 159,65 |
*prijsindicatie
- RS-stocknr.:
- 206-6072
- Fabrikantnummer:
- STP50N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-LL | |
| Series | STP50N60DM6 | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Length | 28.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-LL | ||
Series STP50N60DM6 | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Length 28.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Gerelateerde Links
- STMicroelectronics STP50N60DM6 Type N-Channel MOSFET, 36 A, 600 V Enhancement, 8-Pin TO-LL STP50N60DM6
- STMicroelectronics Type N-Channel MOSFET, 46 A, 600 V Enhancement, 8-Pin TO-LL
- STMicroelectronics Type N-Channel MOSFET, 46 A, 600 V Enhancement, 8-Pin TO-LL STO65N60DM6
- STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 55 A, 600 V, 8-Pin TO-LL STO60N045DM9
- STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 79 A, 600 V, 8-Pin TO-LL STO60N030M9
- STMicroelectronics N-Channel STripFET F7 Type N-Channel MOSFET, 545 A, 60 V Enhancement, 8-Pin TO-LL
- STMicroelectronics N-Channel STripFET F7 Type N-Channel MOSFET, 545 A, 60 V Enhancement, 8-Pin TO-LL STO450N6F7
- STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET, 54 A, 600 V Enhancement, 7-Pin HU3PAK