DiodesZetex DMN62 Type N-Channel MOSFET, 400 mA, 60 V Enhancement, 3-Pin SOT-323
- RS-stocknr.:
- 206-0093
- Fabrikantnummer:
- DMN62D0UWQ-7
- Fabrikant:
- DiodesZetex
Subtotaal (1 verpakking van 50 eenheden)*
€ 7,25
(excl. BTW)
€ 8,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 900 stuk(s) vanaf 05 januari 2026
- Plus verzending 4.000 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,145 | € 7,25 |
*prijsindicatie
- RS-stocknr.:
- 206-0093
- Fabrikantnummer:
- DMN62D0UWQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-323 | |
| Series | DMN62 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 320mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.8 mm | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-323 | ||
Series DMN62 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 320mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.8 mm | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The DiodesZetex 60V N channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and backlighting.
Low on-resistance
Low input capacitance
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