onsemi Power Type N-Channel MOSFET, 150 A, 25 V Enhancement, 8-Pin PQFN NTTFS1D8N02P1E
- RS-stocknr.:
- 205-2432
- Fabrikantnummer:
- NTTFS1D8N02P1E
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,81
(excl. BTW)
€ 9,45
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,781 | € 7,81 |
*prijsindicatie
- RS-stocknr.:
- 205-2432
- Fabrikantnummer:
- NTTFS1D8N02P1E
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | Power | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.2mm | |
| Height | 0.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series Power | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 150°C | ||
Length 3.2mm | ||
Height 0.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Power33 series 25V N-Channel MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Maximum drain current rating is 150A
Drain to source resistance rating is 1.3mohm
Small footprint for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
100% UIL tested
Package is Power 33 (PQFN8)
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