Vishay SiJ128LDP N-Channel MOSFET, 25.5 A, 80 V Enhancement, 4-Pin SO-8 SiJ128LDP-T1-GE3
- RS-stocknr.:
- 204-7217
- Fabrikantnummer:
- SiJ128LDP-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 30,68
(excl. BTW)
€ 37,12
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 november 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 1,534 | € 30,68 |
| 100 - 180 | € 1,356 | € 27,12 |
| 200 - 480 | € 1,32 | € 26,40 |
| 500 - 980 | € 1,287 | € 25,74 |
| 1000 + | € 1,255 | € 25,10 |
*prijsindicatie
- RS-stocknr.:
- 204-7217
- Fabrikantnummer:
- SiJ128LDP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | SiJ128LDP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 15.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 22.3W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.14mm | |
| Standards/Approvals | No | |
| Length | 5.25mm | |
| Height | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series SiJ128LDP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 15.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 22.3W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.14mm | ||
Standards/Approvals No | ||
Length 5.25mm | ||
Height 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It has a very low Qg and Qoss reduce power loss and improve efficiency.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
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