onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L080N120SC1
- RS-stocknr.:
- 202-5701
- Fabrikantnummer:
- NTH4L080N120SC1
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 2 eenheden)*
€ 12,75
(excl. BTW)
€ 15,428
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 446 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 6,375 | € 12,75 |
*prijsindicatie
- RS-stocknr.:
- 202-5701
- Fabrikantnummer:
- NTH4L080N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 22.74mm | |
| Length | 15.2mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 22.74mm | ||
Length 15.2mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.
110mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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