STMicroelectronics ST Type N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263
- RS-stocknr.:
- 202-5496P
- Fabrikantnummer:
- STB33N60DM6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 96,70
(excl. BTW)
€ 117,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 996 stuk(s) vanaf 17 augustus 2026
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Aantal stuks | Per stuk |
|---|---|
| 20 - 48 | € 4,835 |
| 50 + | € 3,96 |
*prijsindicatie
- RS-stocknr.:
- 202-5496P
- Fabrikantnummer:
- STB33N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | ST | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.85mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series ST | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 150°C | ||
Height 15.85mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Extremely high dv/dt ruggedness
Zener-protected
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