STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 15 A, 900 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 201-4467
- Fabrikantnummer:
- STF16N90K5
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 209,50
(excl. BTW)
€ 253,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 4,19 | € 209,50 |
| 100 - 200 | € 4,076 | € 203,80 |
| 250 - 450 | € 3,968 | € 198,40 |
| 500 - 950 | € 3,867 | € 193,35 |
| 1000 + | € 3,771 | € 188,55 |
*prijsindicatie
- RS-stocknr.:
- 201-4467
- Fabrikantnummer:
- STF16N90K5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-220 | |
| Series | SiC MOSFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 330mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29.7nC | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 16mm | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-220 | ||
Series SiC MOSFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 330mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29.7nC | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 16mm | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel 900 V, 280 mO typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package is based on an innovative proprietary vertical structure.
Ultra-low gate charge
100% avalanche tested
Zener-protected
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