Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- RS-stocknr.:
- 201-2810
- Fabrikantnummer:
- FF6MR12W2M1B11BOMA1
- Fabrikant:
- Infineon
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 201-2810
- Fabrikantnummer:
- FF6MR12W2M1B11BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | AG-EASY2B | |
| Series | CoolSiC | |
| Mounting Type | Screw Mount | |
| Maximum Drain Source Resistance | 0.00825 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.55V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 2 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-EASY2B | ||
Series CoolSiC | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 0.00825 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.55V | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
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