Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1

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RS-stocknr.:
201-2810
Fabrikantnummer:
FF6MR12W2M1B11BOMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY2B

Series

CoolSiC

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.00825 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.

High current density
Low inductive design
Low switching losses
RoHS-compliant modules

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