STMicroelectronics SCTW35 N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247
- RS-stocknr.:
- 201-0859
- Fabrikantnummer:
- SCTW35N65G2V
- Fabrikant:
- STMicroelectronics
Subtotaal (1 tube van 30 eenheden)*
€ 383,58
(excl. BTW)
€ 464,13
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 840 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 12,786 | € 383,58 |
*prijsindicatie
- RS-stocknr.:
- 201-0859
- Fabrikantnummer:
- SCTW35N65G2V
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTW35 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Width | 5.15mm | |
| Length | 14.8mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTW35 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Width 5.15mm | ||
Length 14.8mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Gerelateerde Links
- STMicroelectronics SCTW35 N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- STMicroelectronics SCTWA35N65G2V-4 N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- STMicroelectronics SCT N-Channel MOSFET, 45 A, 650 V Depletion, 3-Pin Hip-247 SCTW35N65G2VAG
- STMicroelectronics SCTW90 N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247 SCTW90N65G2V
- STMicroelectronics SiC MOSFET N-Channel, 55 A, 650 V Enhancement, 3-Pin Hip-247 SCT018W65G3AG
- STMicroelectronics N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120
- STMicroelectronics SCTWA90N65G2V-4 N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4