onsemi Dual 2 N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN NVMFD6H840NLWFT1G
- RS-stocknr.:
- 195-2671
- Fabrikantnummer:
- NVMFD6H840NLWFT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 15 eenheden)*
€ 27,54
(excl. BTW)
€ 33,33
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 135 | € 1,836 | € 27,54 |
| 150 - 360 | € 1,583 | € 23,75 |
| 375 + | € 1,372 | € 20,58 |
*prijsindicatie
- RS-stocknr.:
- 195-2671
- Fabrikantnummer:
- NVMFD6H840NLWFT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 800mV | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | +175°C | |
| Width | 5.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 800mV | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature +175°C | ||
Width 5.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 6.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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