onsemi NVMJS2D5N06CL Type N-Channel MOSFET, 164 A, 60 V Enhancement, 8-Pin LFPAK NVMJS2D5N06CLTWG
- RS-stocknr.:
- 195-2507
- Fabrikantnummer:
- NVMJS2D5N06CLTWG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 29,66
(excl. BTW)
€ 35,88
(incl. BTW)
Voeg 60 eenheden toe voor gratis bezorging
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 1,483 | € 29,66 |
| 200 - 480 | € 1,279 | € 25,58 |
| 500 + | € 1,108 | € 22,16 |
*prijsindicatie
- RS-stocknr.:
- 195-2507
- Fabrikantnummer:
- NVMJS2D5N06CLTWG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NVMJS2D5N06CL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 113W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 1.15mm | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NVMJS2D5N06CL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 113W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 1.15mm | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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