STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6
- RS-stocknr.:
- 192-4925
- Fabrikantnummer:
- STP26N60DM6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 8,16
(excl. BTW)
€ 9,88
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Plus verzending 66 stuk(s) vanaf 22 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 4,08 | € 8,16 |
| 10 - 18 | € 3,84 | € 7,68 |
| 20 - 48 | € 3,635 | € 7,27 |
| 50 - 98 | € 3,43 | € 6,86 |
| 100 + | € 3,27 | € 6,54 |
*prijsindicatie
- RS-stocknr.:
- 192-4925
- Fabrikantnummer:
- STP26N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 195mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 195mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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