Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	55 A
	Maximum Drain Source Voltage	1200 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance	52 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5.6V
	Minimum Gate Threshold Voltage	2.7V
	Maximum Power Dissipation	262 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	22 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Transistor Material	SiC
	Typical Gate Charge @ Vgs	107 nC @ 18V

	Alles selecteren
	Merk ROHM
	Channel Type N
	Maximum Continuous Drain Current 55 A
	Maximum Drain Source Voltage 1200 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance 52 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5.6V
	Minimum Gate Threshold Voltage 2.7V
	Maximum Power Dissipation 262 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 22 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Transistor Material SiC
	Typical Gate Charge @ Vgs 107 nC @ 18V

Datasheet SCT3040KRC14

SCT3040KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver source terminal is improving high-speed switching performance.

Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating
High efficiency 4pin package
Evaluation board 'P02SCT3040KR-EVK-001'
Application
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives

ROHM SiC N-Channel MOSFET, 55 A, 1200 V, 4-Pin TO-247 SCT3040KRC14

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