onsemi N-Channel MOSFET, 44 A, 1.2 kV Enhancement, 3-Pin TO-247 NVHL080N120SC1
- RS-stocknr.:
- 189-0419
- Fabrikantnummer:
- NVHL080N120SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 12,71
(excl. BTW)
€ 15,38
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending vanaf 08 maart 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 12,71 |
| 10 + | € 10,96 |
*prijsindicatie
- RS-stocknr.:
- 189-0419
- Fabrikantnummer:
- NVHL080N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 162mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -15V, +25V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4V | |
| Maximum Power Dissipation Pd | 348W | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Width | 4.82mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 162mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -15V, +25V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4V | ||
Maximum Power Dissipation Pd 348W | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Width 4.82mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
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