onsemi NTHL Type N-Channel MOSFET, 70 A, 650 V Enhancement, 3-Pin TO-247 NTHL033N65S3HF

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Verpakkingsopties
RS-stocknr.:
189-0397
Fabrikantnummer:
NTHL033N65S3HF
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

650V

Series

NTHL

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

188nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

20.82mm

Standards/Approvals

No

Length

15.87mm

Width

4.82 mm

Automotive Standard

No

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 188 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 28 mΩ

Benefits

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge circuit

Lower switching loss

Higher system reliability at low temperature operation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

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