STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 188-8289
- Fabrikantnummer:
- STD5N80K5
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 2500 eenheden)*
€ 1.932,50
(excl. BTW)
€ 2.337,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,773 | € 1.932,50 |
*prijsindicatie
- RS-stocknr.:
- 188-8289
- Fabrikantnummer:
- STD5N80K5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.73Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 60W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.17mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.73Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 60W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.17mm | ||
Automotive Standard No | ||
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
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