Vishay TrenchFET Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 SQD40020E_GE3
- RS-stocknr.:
- 188-5048
- Fabrikantnummer:
- SQD40020E_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,10
(excl. BTW)
€ 14,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,21 | € 12,10 |
| 100 - 240 | € 1,15 | € 11,50 |
| 250 - 490 | € 0,969 | € 9,69 |
| 500 - 990 | € 0,908 | € 9,08 |
| 1000 + | € 0,847 | € 8,47 |
*prijsindicatie
- RS-stocknr.:
- 188-5048
- Fabrikantnummer:
- SQD40020E_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.00233Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.41mm | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.00233Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 107W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 10.41mm | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
TrenchFET® power MOSFET
Package with low thermal resistance
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