DiodesZetex DMP Type P-Channel MOSFET, 7.4 A, 20 V Enhancement, 8-Pin TSSOP DMP2021UTS-13
- RS-stocknr.:
- 182-7357
- Fabrikantnummer:
- DMP2021UTS-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,48
(excl. BTW)
€ 6,63
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,548 | € 5,48 |
| 100 - 490 | € 0,438 | € 4,38 |
| 500 - 990 | € 0,40 | € 4,00 |
| 1000 - 1990 | € 0,338 | € 3,38 |
| 2000 + | € 0,313 | € 3,13 |
*prijsindicatie
- RS-stocknr.:
- 182-7357
- Fabrikantnummer:
- DMP2021UTS-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSSOP | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 4.5mm | |
| Width | 3.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSSOP | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 4.5mm | ||
Width 3.1 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
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