DiodesZetex DMG Type P-Channel MOSFET, 4 A, 20 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 182-6879
- Fabrikantnummer:
- DMG3415U-7-57
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 243,00
(excl. BTW)
€ 294,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 3.000 stuk(s) vanaf 07 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 6000 | € 0,081 | € 243,00 |
| 9000 - 12000 | € 0,078 | € 234,00 |
| 15000 + | € 0,076 | € 228,00 |
*prijsindicatie
- RS-stocknr.:
- 182-6879
- Fabrikantnummer:
- DMG3415U-7-57
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMG | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Power Dissipation Pd | 900mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMG | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Power Dissipation Pd 900mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
PPAP Capable
Applications
DC-DC Converters
Power Management Functions
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