onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN

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RS-stocknr.:
181-1857
Fabrikantnummer:
FDMS86181
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

124A

Maximum Drain Source Voltage Vds

100V

Package Type

PQFN

Series

FDMS86181

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.85mm

Width

5 mm

Height

1.05mm

Automotive Standard

No

Land van herkomst:
PH
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A

Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A

ADD

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

This product is general usage and suitable for many different applications.

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