Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3
- RS-stocknr.:
- 180-7820
- Fabrikantnummer:
- SI7119DN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 8,39
(excl. BTW)
€ 10,15
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 8.790 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,839 | € 8,39 |
| 100 - 240 | € 0,797 | € 7,97 |
| 250 - 490 | € 0,604 | € 6,04 |
| 500 - 990 | € 0,545 | € 5,45 |
| 1000 + | € 0,462 | € 4,62 |
*prijsindicatie
- RS-stocknr.:
- 180-7820
- Fabrikantnummer:
- SI7119DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 50°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Height | 1.07mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 50°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Height 1.07mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 1050mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 3.8A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Low thermal resistance powerpak package with small size and low 1.07 mm profile
• Maximum dissipation power 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
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