Vishay Dual TrenchFET 2 N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SO-8 SI4946BEY-T1-E3
- RS-stocknr.:
- 180-7732
- Fabrikantnummer:
- SI4946BEY-T1-E3
- Fabrikant:
- Vishay
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 180-7732
- Fabrikantnummer:
- SI4946BEY-T1-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.052Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Power Dissipation Pd | 3.7W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Height | 1.75mm | |
| Width | 4mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.052Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Power Dissipation Pd 3.7W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Height 1.75mm | ||
Width 4mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Vishay MOSFET
The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 60V. It has drain-source resistance of 41mohm at a gate-source voltage of 10V. It has continuous drain current of 6.5A and a maximum power rating of 3.7W. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
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