Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

RS-stocknr.:: 180-7282
Fabrikantnummer:: SI3585CDV-T1-GE3
Fabrikant:: Vishay

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 582,00

(excl. BTW)

€ 705,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 31 mei 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,194	€ 582,00

*prijsindicatie

RS-stocknr.:: 180-7282
Fabrikantnummer:: SI3585CDV-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.2nC
	Maximum Gate Source Voltage Vgs	12V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.4W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Width	1.65mm
	Length	3.05mm
	Standards/Approvals	No
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.2nC
	Maximum Gate Source Voltage Vgs 12V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.4W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Width 1.65mm
	Length 3.05mm
	Standards/Approvals No
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Drivers: motor, solenoid, relay

• Load switch for portable devices

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested