Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1

RS-stocknr.:: 178-7474
Fabrikantnummer:: BSS670S2LH6327XTSA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1

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RS-stocknr.:: 178-7474
Fabrikantnummer:: BSS670S2LH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	540mA
	Maximum Drain Source Voltage Vds	55V
	Series	OptiMOS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	825mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	360mW
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.7nC
	Forward Voltage Vf	0.8V
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Standards/Approvals	No
	Height	1mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 540mA
	Maximum Drain Source Voltage Vds 55V
	Series OptiMOS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 825mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 360mW
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.7nC
	Forward Voltage Vf 0.8V
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Standards/Approvals No
	Height 1mm
	Automotive Standard AEC-Q101

BSS670S2L OptiMOS Buck converter series Datasheet

Infineon OptiMOS Series MOSFET, 55V Drain Source Voltage, 540mA Continuous Drain Current - BSS670S2LH6327XTSA1

This MOSFET is a small-signal N-channel transistor designed for surface-mounted switching in compact electronic systems. It is intended for applications that require controlled enhancement-mode switching with moderate voltage and current ratings, and is qualified for automotive environments.

Features and Benefits:

• 55V drain tolerance enables higher-voltage switching circuits
• 825mΩ low RDS(on) minimises conduction losses in low-current paths
• 540mA continuous drain current supports steady-state loads
• 1.7nC typical gate charge allows efficient high-speed switching
• 360mW power dissipation suits modest thermal budgets
• -55°C to 150°C operating range accommodates wide-temperature environments

Applications

• Suitable for automotive sensor-interface switching
• Ideal for DC load switching in compact modules
• Used with battery-management auxiliary circuits
• Can be used for gate drivers in low-power converters
• Used for signal-level switching on mixed-signal boards

What mounting considerations apply to small packages?

The device is supplied in a three-pin SOT-23 package intended for surface mounting, so land-pattern thermal relief and solder fillets should be planned to manage its 360mW dissipation.

How does gate drive affect switching performance?

Driving the gate up to 20V increases conduction margin, while the 1.7nC gate charge determines required driver current for desired rise/fall times.

What is the device’s behaviour under continuous load?

It can carry up to 540mA continuously, provided thermal constraints are respected and ambient conditions allow sufficient heat transfer.

Is this component suitable for automotive qualification needs?

It meets AEC‑Q101 requirements, making it appropriate for automotive electronic applications that require that standard.