Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- RS-stocknr.:
- 178-7474
- Fabrikantnummer:
- BSS670S2LH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 150,00
(excl. BTW)
€ 180,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- 9.000 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,05 | € 150,00 |
| 6000 + | € 0,047 | € 141,00 |
*prijsindicatie
- RS-stocknr.:
- 178-7474
- Fabrikantnummer:
- BSS670S2LH6327XTSA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 825mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 825mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 1.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 55V Drain Source Voltage, 540mA Continuous Drain Current - BSS670S2LH6327XTSA1
Features and Benefits:
• 825mΩ low RDS(on) minimises conduction losses in low-current paths
• 540mA continuous drain current supports steady-state loads
• 1.7nC typical gate charge allows efficient high-speed switching
• 360mW power dissipation suits modest thermal budgets
• -55°C to 150°C operating range accommodates wide-temperature environments
Applications
• Ideal for DC load switching in compact modules
• Used with battery-management auxiliary circuits
• Can be used for gate drivers in low-power converters
• Used for signal-level switching on mixed-signal boards
What mounting considerations apply to small packages?
How does gate drive affect switching performance?
What is the devices behaviour under continuous load?
Is this component suitable for automotive qualification needs?
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