Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- RS-stocknr.:
- 178-7474
- Fabrikantnummer:
- BSS670S2LH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 150,00
(excl. BTW)
€ 180,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 9.000 stuk(s) vanaf 31 december 2025
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,05 | € 150,00 |
| 6000 + | € 0,047 | € 141,00 |
*prijsindicatie
- RS-stocknr.:
- 178-7474
- Fabrikantnummer:
- BSS670S2LH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 825mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 825mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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