onsemi N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTPF082N65S3F
- RS-stocknr.:
- 178-4602
- Fabrikantnummer:
- NTPF082N65S3F
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 6,76
(excl. BTW)
€ 8,18
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 266 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,76 |
| 10 + | € 5,82 |
*prijsindicatie
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Per stuk (in een tube 50)
€ 211,55
(excl. BTW)
€ 255,98
(incl. BTW)
- RS-stocknr.:
- 178-4602
- Fabrikantnummer:
- NTPF082N65S3F
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Power Dissipation Pd | 48W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Height | 16.12mm | |
| Length | 10.63mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Power Dissipation Pd 48W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Height 16.12mm | ||
Length 10.63mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150 oC
Ultra Low Gate Charge (Typ. Qg = 70 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge Circuit
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
Solar / UPS
EV charger
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