Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3

RS-stocknr.:: 178-3903
Fabrikantnummer:: SQJ872EP-T1_GE3
Fabrikant:: Vishay Siliconix

Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3

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€ 11,52

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€ 13,94

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GRATIS bezorging voor bestellingen vanaf € 90,00

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Aantal stuks	Per stuk	Per verpakking*
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100 - 490	€ 0,978	€ 9,78
500 - 990	€ 0,864	€ 8,64
1000 +	€ 0,749	€ 7,49

*prijsindicatie

RS-stocknr.:: 178-3903
Fabrikantnummer:: SQJ872EP-T1_GE3
Fabrikant:: Vishay Siliconix

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay Siliconix
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24.5A
	Maximum Drain Source Voltage Vds	150V
	Package Type	SO-8L
	Series	SQJ872EP
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0395Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	55W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Height	1.07mm
	Width	5mm
	Length	5.99mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay Siliconix
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24.5A
	Maximum Drain Source Voltage Vds 150V
	Package Type SO-8L
	Series SQJ872EP
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0395Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 55W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Height 1.07mm
	Width 5mm
	Length 5.99mm
	Automotive Standard AEC-Q101

Datasheet

Vrijgesteld

Land van herkomst:: CN

Vishay Siliconix SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Maximum Continuous Drain Current - SQJ872EP-T1_GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching in demanding electronic systems. It operates within a wide temperature range suitable for automotive-class applications and is supplied in a Compact SO-8L package for PCB mounting. The device is intended for circuits requiring robust current handling and efficient switching at elevated voltages.

Features and Benefits:

• 150V drain rating enables high-voltage switching applications
• 24.5A continuous drain current supports heavy-load operation
• 0.0395Ω Rds(on) reduces conduction losses for improved efficiency
• 14nC typical gate charge ensures responsive switching behaviour
• 55W power dissipation allows sustained thermal loading
• 20V gate tolerance permits flexible gate-drive voltages

Applications

• Suitable for automotive power distribution modules requiring high-voltage switching
• Ideal for DC-DC converters in industrial automation systems
• Used for motor-drive stages in electrical and mechanical equipment
• Can be used for power supply switching in telematics and control units

What mounting method should be used for reliable assembly?

The device is intended for PCB mounting in an SO-8L footprint to ensure stable electrical and thermal contact.

How does the device perform under wide temperature extremes?

It is rated to operate from -55°C up to 175°C, accommodating harsh thermal environments encountered in automotive and industrial settings.

Which characteristics affect switching losses most directly?

Switching losses are influenced by the typical gate charge of 14nC and the combination of Rds(on) with drain voltage during transitions.

How many pins are available for circuit connections?

The package provides eight pins to accommodate standard SO-8L PCB layouts and routing requirements.