Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- RS-stocknr.:
- 178-3851P
- Fabrikantnummer:
- SQS966ENW-T1_GE3
- Fabrikant:
- Vishay Siliconix
Bulkkorting beschikbaar
Subtotaal 100 eenheden (geleverd op een doorlopende strip)*
€ 59,40
(excl. BTW)
€ 71,90
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 100 - 475 | € 0,594 |
| 500 - 975 | € 0,523 |
| 1000 + | € 0,454 |
*prijsindicatie
- RS-stocknr.:
- 178-3851P
- Fabrikantnummer:
- SQS966ENW-T1_GE3
- Fabrikant:
- Vishay Siliconix
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Power Dissipation Pd | 27.8W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Length | 3.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Power Dissipation Pd 27.8W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Length 3.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Vrijgesteld
- Land van herkomst:
- CN
TrenchFET® power MOSFET
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