Vishay IRF840A Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220 IRF840APBF
- RS-stocknr.:
- 178-0835
- Fabrikantnummer:
- IRF840APBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 57,65
(excl. BTW)
€ 69,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 200 stuk(s) vanaf 05 januari 2026
- Plus verzending 50 stuk(s) vanaf 05 januari 2026
- Plus verzending 5.650 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,153 | € 57,65 |
| 100 - 200 | € 0,98 | € 49,00 |
| 250 + | € 0,923 | € 46,15 |
*prijsindicatie
- RS-stocknr.:
- 178-0835
- Fabrikantnummer:
- IRF840APBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | IRF840A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series IRF840A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
Gerelateerde Links
- Vishay IRF840A Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220
- Vishay IRFB Type N-Channel MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220
- Vishay IRF840LC Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220
- Vishay IRF830A Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220 IRF820APBF
- Vishay IRF830A Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220 IRF830APBF
- Vishay IRF840LC Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220 IRF840LCPBF