Vishay IRF840A Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840APBF

RS-stocknr.:: 178-0835
Fabrikantnummer:: IRF840APBF
Fabrikant:: Vishay

Vishay IRF840A Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840APBF

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Subtotaal (1 tube van 50 eenheden)*

€ 79,20

(excl. BTW)

€ 95,85

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending 100 stuk(s) vanaf 03 juli 2026
Plus verzending 3.150 stuk(s) vanaf 06 juli 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,584	€ 79,20
100 - 200	€ 1,346	€ 67,30
250 +	€ 1,267	€ 63,35

*prijsindicatie

RS-stocknr.:: 178-0835
Fabrikantnummer:: IRF840APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRF840A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	850mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	2V
	Typical Gate Charge Qg @ Vgs	38nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Length	10.41mm
	Standards/Approvals	RoHS
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRF840A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 850mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 2V
	Typical Gate Charge Qg @ Vgs 38nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Length 10.41mm
	Standards/Approvals RoHS
	Height 9.01mm
	Automotive Standard No

Datasheet

Vishay IRF840A Series Power MOSFET, 500V Drain-Source Voltage, 8A Continuous Drain Current - IRF840APBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion tasks in industrial and electronic systems. It operates across a wide temperature span and is packaged for through-hole mounting to support conventional PCB assembly and heatsinking approaches.

Features and Benefits:

• 500V drain-source rating enables high-voltage switching applications • 8A continuous drain current supports moderate load handling • 850mΩ Rds(on) reduces conduction losses in low-current designs • 125W power dissipation allows substantial thermal headroom • 38nC typical gate charge yields predictable switching behaviour • 30V gate-source limit ensures compatibility with common gate drivers

Applications

• Suitable for high-voltage power supply design and conversion tasks • Ideal for switching stages in automation control equipment • Used for motor drive front ends requiring through-hole components • Can be used for industrial inverter and converter prototypes • Used with discrete power boards requiring TO-220 mounting

What operating temperatures can I expect for reliable use?

The device is rated to operate from -55°C up to a maximum of 150°C, supporting harsh ambient conditions and elevated junction temperatures with appropriate thermal management.

What packaging considerations affect cooling and mounting?

The through-hole TO-220AB package with three pins permits direct attachment to heatsinks or chassis plates, facilitating conduction cooling and straightforward soldering onto traditional boards.

How does the gate charge influence driver selection?

With a typical gate charge of 38nC at specified gate drive, you should choose a gate driver capable of delivering sufficient Peak current to achieve the desired switching speed without excessive drive losses.

What voltage and current limits must designs respect?

Continuous drain current should be kept at or below 8A, and drain-source voltage must not exceed 500V to avoid device overstress.

Are there material or regulatory constraints to consider?

The component is supplied in a RoHS-compliant form, indicating adherence to standard restrictions on certain hazardous substances.