Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF

RS-stocknr.:: 178-0834
Fabrikantnummer:: IRF830APBF
Fabrikant:: Vishay

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF

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Subtotaal (1 tube van 50 eenheden)*

€ 64,80

(excl. BTW)

€ 78,40

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,296	€ 64,80
100 - 200	€ 1,231	€ 61,55
250 +	€ 1,166	€ 58,30

*prijsindicatie

RS-stocknr.:: 178-0834
Fabrikantnummer:: IRF830APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRF830A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Height	9.01mm
	Length	10.41mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRF830A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Height 9.01mm
	Length 10.41mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

Vishay IRF830A Series Power MOSFET, 500V Maximum Drain Source Voltage, 5A Maximum Continuous Drain Current - IRF830APBF

This power MOSFET is a through-hole N-channel enhancement device designed for high-voltage switching in industrial electronics. It is intended for applications where robust drain-to-source voltage handling and moderate current capacity are required, providing a Compact solution for power switching on heatsinked assemblies.

Features and Benefits:

• 500V Vds enables high-voltage switching in industrial circuits • 5A continuous drain current supports steady load operation • 1.4Ω Rds(on) minimises conduction losses under load • 74W maximum power dissipation for effective thermal handling • 24nC typical gate charge allows predictable switching behaviour • Vgs ±30V rating protects gate under control-signal excursions

Applications

• Suitable for high-voltage motor drive front-ends • Ideal for switch-mode power supplies in industrial equipment • Used for power conversion modules requiring through-hole mounting • Can be used for relay-replacement switching in control panels

What mounting method is required for reliable heat removal?

The device is supplied in a TO-220AB package for through-hole installation and benefits from a heatsink attached to the tab to achieve rated power dissipation.

How does the gate charge affect switching performance?

A typical gate charge of 24nC at rated conditions determines required driver strength and influences switching losses and rise/fall times in high-speed applications.

What temperature range can it operate within?

The component is rated to function from -55°C up to 150°C, allowing use across harsh industrial thermal environments.

What protection should be considered for gate and drain overstress?

Designers should include gate protection to remain within ±30V and implement snubbing or clamp networks to limit transients on the drain at high voltages.